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2017-3-3 · For: 150-mm 4HN Silicon Carbide Epitaxial Wafers Cree InC., a supplier of SiC and Gan materials, successfully developed and introduced 150-mm 4H n-type silicon carbide, (SiC) epitaxial wafers in 2012. These high quality, low micropipe 150-mm substrates and epitaxial wafers demonstrate Cree’s latest advancement in SiC technology.

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The silicon was etched using a 50 % HF : ethanol = 1 : 1 solution indark and at room temperature. Before anodization the substrate was placed inHF solution to remove the native oxide. A current density of 400 d c m 2 for 0.8 s was applied to obtain the highrefractive index layer with a porosity of 75 % while one of 80 mA/cm2 wasapplied for 1.87


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Abdul Patar, Mohd Affifudin and Kamdi, Zakiah (2018) Influence of Deposition Parameter to Wear Behaviour of Tungsten Carbide-Nickel (WC-Ni) High Velocity Oxyfuel (HVOF) Coating. Journal of Science and Technology, 10 (4). pp. 64-70. ISSN 2600-7924

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2015-8-11 · Coatings Word March 2014 - Free download as PDF File (.pdf), Text File (.txt) or read online for free. The Resource for the Global Coatings Industry, Volume March 2014


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2Phase Technologies PO Box 730, Dayton, NV 89403 775-246-8324 • 2Phase Technologies, Inc. is the leading provider of complete solutions for rapid and low-cost prototyping, repair, and custom manufacturing of composite and plastic parts. Our revolutionary tooling systems produce reconfigurable, reusable tooling that can be used with composites, thermoplastics, or liquid

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aluminium oxide, silicon carbide, and selected fractions of fly ash), mastering the physico-chemical fundamental rules for the manufacture of cast in situ. composites of the Al-Al2O3 type, development of a method for the rheocast-type structure formation in an appliion. approach to the technique of making products in semi-solid state


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