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TND6299 - The Difference Between GaN and SiC Transistors

high as 1 MHz at voltage and current levels much higher than silicon MOSFETs. Maximum drain−source voltage is up to about 1,800 V with a current capability to 100 amperes. In addition, the on−resistance of SiC devices is much lower than that of silicon MOSFETs, making them more ef ficient in all switching power appliions (SMPS designs).

Littelfuse introduces 1200V SiC MOSFETs with low on …

At APEC 2018, San Antonio, Texas, USA, Littelfuse announces 1200V SiC MOSFETs that outperform silicon MOSFETs and IGBTs for fast switching in power conversion systems. The two 1200V silicon carbide (SiC) n-channel, enhancement-mode MOSFETs are the latest products from a strategic partnership that Littelfuse formed with Monolith in 2015 to develop power semiconductors for industrial …

1200V SiC MOSFETs Feature Ultra-Low On-Resistances

CHICAGO — Littelfuse, Inc. added two 1200V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs to their expanding first-generation portfolio of power semiconductor devices. These new SiC MOSFETs are the latest products of a strategic partnership that Littelfuse formed with Monolith in 2015 to develop power semiconductors for industrial and automotive markets.

United Silicon Carbide Inc. Homepage - United Silicon

2020-8-23 · “The evolution of this power supply has created ever-greater benefits for our customers, particularly with respect to energy savings. Efficiency and reliability are paramount for them and this latest design, with the support of UnitedSiC products, excels in both respects.”

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Infineon’s New Silicon Carbide Power Module for …

The new module is based on Infineon’s silicon carbide trench MOSFET structure. Compared to planar structures, the trench structure enables a higher cell density, resulting in the best-in-class figure of merit. As a result, trench MOSFETs can be operated at lower gate-oxide field strengths for higher reliability.

SCTWA35N65G2VAG - Automotive-grade silicon …

SCTWA35N65G2VAG - Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package, SCTWA35N65G2VAG, STMicroelectronics

STMicroelectronics Expands Access to Market-Unique …

15  · STMicroelectronics has added a QFN48 package to the award-winning STM32WLE5* wireless System-on-Chip (SoC) portfolio, bringing the device’s extensive feature integration, power efficiency, and multi-modulation flexibility to a wider variety of industrial wireless appliions. The STM32WLE5, named ‘Best IoT Connectivity Solution’ at IoT World 2020, coines ST’s STM32L4 …

ON Semiconductor: Find Local Sales Support

Technical Support Centers: United States and the Americas: Voice Mail: 1 800 282 9855: Phone: 011 421 33 790 2910: Hours: M-F, 9:00AM - 5:00PM MST (GMT -07:00)

Richardson RFPD | Home | Richardson RFPD

2020-8-24 · Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world''s leading suppliers of RF, Wireless, IoT and Power Technologies.

Infineon introduces new silicon carbide power module …

Silicon carbide in electric vehicles stands for more efficiency, higher power density and performance. Particularly with an 800 V battery system and a large battery capacity, silicon carbide leads to a higher efficiency in inverters and thus enables longer ranges or lower battery costs.

Silicon Carbide Gate Drive Evaluation Platform from

2020-6-2 · Littelfuse, Inc. announced the Gate Drive Evaluation Platform (GDEV). The new evaluation platform helps designers evaluate SiC MOSFETs, SiC Schottky diodes, and other peripheral components like gate driver circuitry, so that they can better understand how silicon carbide technologies will behave in converter appliions under continuous operating conditions.

SiC MOSFETs suit high-voltage industrial appliions.

Designed for high-power industrial appliions where efficiency is critical, 1,200 V Silicon Carbide MOSFETs are suited for solar inverters, electric vehicles, welding, and medical devices. Units are rated at 80 mΩ and 50 mΩ and provide development flexibility by offering both industry standard TO-247 and SOT-227 packages.

Products - RELL Power

2020-8-20 · Please browse our selection of new and innovative products that support the alternative energy, avionics and radar, broadcast, communiions, industrial, marine, medical, military and scientific markets. You can search by part nuer, navigate by product type, or filter by egory, subegory or manufacturer. You may also wish to visit the Design & Services section of […]

Infineon silicon carbide power module for EVs

Silicon carbide in electric vehicles stands for more efficiency, higher power density and performance. Particularly with an 800V battery system and a large battery capacity, silicon carbide leads to a higher efficiency in inverters and thus enables longer ranges or lower battery costs.

Infineon unveils 1200 V Silicon Carbide MOSFET …

2019-9-2 · Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has unveiled a revolutionary silicon carbide (SiC) MOSFET technology allowing product designs to achieve previously unattainable levels of power density and

News - June 2018 - IXYS Silicon Carbide Power …

2020-7-13 · GD Rectifiers supplies semiconductor devices and builds semiconductor asselies for a wide range of appliions and can help with design and prototype production. From micro amps to megawatts, we are at your service.

GeneSIC Semiconductor Distributors | SourceESB

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. Our mission is to deliver the best customer driven designs possible, with leading performance and quality while maintaining a highly competitive price.

United Silicon Carbide, Inc. Distributors | SourceESB

SiC transistors, diodes & silicon carbide devices. UnitedSiC is a semiconductor company specializing in the development of high-efficiency silicon carbide (SiC) devices with process expertise in Schottky barrier diodes, JFETs, MOSFETs, and solid state circuit breakers.UnitedSiC technology and products enable affordable power efficiency in key markets that will drive the new and greener economy.

Wolfspeed Expands Industry-Leading, Third …

Achieves Industry’s Lowest Figure-of-Merit in a Discreet Device . DURHAM, N.C.-- Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has expanded its innovative C3M ™ platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while

EEWeb User Articles in Silicon Carbide Tag | EEWeb …

A worldwide innovation hub servicing component manufacturers and distributors with unique marketing solutions. The video is another geek moment presented by Digi-Key on Cree''s Silicon Carbide MOSFETs (SiCFETs). The Silicon Carbide MOSFET is rated at 20 A and 1200 V and is designed More. Silicon Carbide, < 1 > Browse by egories. All

IXYS Website > Product Portfolio > Power Devices

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Audiozen | Let your ears be your guide

Audiozen is already well known for offering Hi-Fi products designed and made in Italy at an excellent value for money. Since 2008 our path has been marked by innovative choices, constant “know-how” and great passion, and all of this is tangible in all our creations: choose …

Infineon pitches new silicon carbide power module for

The new module is based on Infineon’s silicon carbide trench MOSFET structure. Compared to planar structures, the trench structure enables a higher cell density, resulting in the best-in-class figure of merit. As a result, trench MOSFETs can be operated at lower gate-oxide field strengths for higher reliability.

UJ3C120040K3S SiC MOSFET Cascode 12kV 35mOhm …

UJ3C120040K3S - SiC MOSFET Cascode 1.2kV 35mOhm TO-247-3L, United Silicon Carbide

Third-Gen SiC MOSFET Now in 1200V Version | …

1200 V SiC MOSFET incorporates C3M planar technology. Source: Wolfspeed Wolfspeed has expanded its innovative C3M™platform through the introduction of a 1200V, 75 mΩ MOSFET in its recently released low-inductance discrete packaging. The device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI and enabling 99

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